參數(shù)資料
型號: HB52F649E1
廠商: Hitachi,Ltd.
英文描述: 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
中文描述: 注冊使用512 MB SDRAM的內(nèi)存(512 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 5/21頁
文件大小: 163K
代理商: HB52F649E1
HB52F649E1-75B
5
Serial PD Matrix*
1
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
0
Number of bytes used by
module manufacturer
1
0
0
0
0
0
0
0
80
128
1
Total SPD memory size
0
0
0
0
1
0
0
0
08
256 byte
2
Memory type
0
0
0
0
0
1
0
0
04
SDRAM
3
Number of row addresses bits
0
0
0
0
1
1
0
1
0D
13
4
Number of column addresses
bits
0
0
0
0
1
0
1
1
0B
11
5
Number of banks
0
0
0
0
0
0
0
1
01
1
6
Module data width
0
1
0
0
1
0
0
0
48
72 bit
7
Module data width (continued)
0
0
0
0
0
0
0
0
00
0 (+)
8
Module interface signal levels
0
0
0
0
0
0
0
1
01
LVTTL
9
SDRAM cycle time
(highest
CE
latency)
7.5 ns
0
1
1
1
0
1
0
1
75
CL = 3
10
SDRAM access from Clock
(highest
CE
latency)
5.4 ns
0
1
0
1
0
1
0
0
54
*
5
11
Module configuration type
0
0
0
0
0
0
1
0
02
ECC
12
Refresh rate/type
1
0
0
0
0
0
1
0
82
Normal
(7.8125
μ
s)
Self refresh
13
SDRAM width
0
0
0
0
0
1
0
0
04
64M
×
4
×
4
14
Error checking SDRAM width
0
0
0
0
0
1
0
0
04
15
SDRAM device attributes:
minimum clock delay for back-to-
back random column addresses
0
0
0
0
0
0
0
1
01
1 CLK
16
SDRAM device attributes:
Burst lengths supported
0
0
0
0
1
1
1
1
0F
1, 2, 4, 8
17
SDRAM device attributes:
number of banks on SDRAM
device
0
0
0
0
0
1
0
0
04
4
18
SDRAM device attributes:
CE
latency
0
0
0
0
0
1
1
0
06
2/3
19
SDRAM device attributes:
S
latency
0
0
0
0
0
0
0
1
01
0
20
SDRAM device attributes:
W
latency
0
0
0
0
0
0
0
1
01
0
21
SDRAM device attributes
0
0
0
1
0
1
1
0
16
Registered
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