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參數(shù)資料
| 型號： | HB52E649E12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| 中文描述： | 注冊使用512 MB SDRAM的內(nèi)存（512 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 12/18頁 |
| 文件大?。?/td> | 541K |
| 代理商： | HB52E649E12 |
HB52E649E12-A6B/B6B
12
Notes: 1. I
CC
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK operating current.
7. After power down mode, no CK operating current.
8. After self refresh mode set, self refresh current.
Capacitance (Ta = 25
°
C, V
CC
= 3.3 V
±±
0.3 V)
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1 MHz, 1.4 V bias, 200 mV swing.
3. DQMB = V
IH
to disable Data-out.
4. This parameter is sampled and not 100% tested.
Active standby current in
non power down
Burst operating current
(CE latency = 3)
(CE latency = 4)
Refresh current
Self refresh current
I
CC3N
——
1050
——
1050
mA
CKE, S = V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
1, 2, 4
I
CC4
I
CC4
I
CC5
I
CC6
——
——
——
——
2220
2220
4470
564
——
——
——
——
——
2220
4470
564
mA
mA
mA
mA
1, 2, 5
V
IH
≥
= V
CC
–– 0.2 V
V
IL
≤
= 0.2 V
0
≤
= Vin
≤
= V
CC
0
≤
= Vout
≤
= V
CC
DQ = disable
I
OH
= ––4 mA
I
OL
= 4 mA
8
Input leakage current
Output leakage current
I
LI
I
LO
––10
––10
10
10
––10
––10
10
10
μμ
A
μμ
A
Output high voltage
Output low voltage
V
OH
V
OL
2.4
——
——
0.4
2.4
——
——
0.4
V
V
Parameter
Input capacitance (Address)
Input capacitance (RE, CE, W)
Input capacitance (CKE)
Input capacitance (S)
Input capacitance (CK)
Input capacitance (DQMB)
Input/Output capacitance (DQ)
Symbol
C
I1
C
I2
C
I3
C
I4
C
I5
C
I6
C
I/O1
Max
15
15
23
15
40
15
15
Unit
pF
pF
pF
pF
pF
pF
pF
Notes
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 3, 4
Parameter
Symbol
HB52E649E12
-A6B
Min
Unit
Test conditions
Notes
-B6B
Min
Max
Max
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649E12-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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