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參數(shù)資料
| 型號： | HB52E649E12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| 中文描述： | 注冊使用512 MB SDRAM的內(nèi)存（512 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 1/18頁 |
| 文件大?。?/td> | 541K |
| 代理商： | HB52E649E12 |
HB52E649E12-A6B/B6B
512 MB Registered SDRAM DIMM
64-Mword
×
72-bit, 100 MHz Memory Bus, 1-Bank Module
(18 pcs of 64 M
×
4 Components)
PC100 SDRAM
ADE-203-1088 (Z)
Preliminary
Rev. 0.0
Jul. 14, 1999
Description
The HB52E649E12 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed
as an optimized main memory solution for 8-byte processor applications. The HB52E649E12 is a 64M
×
72
×
1-bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256-Mbit SDRAM
(HM5225405BTT) sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1
piece of serial EEPROM (2-kbit) for Presence Detect (PD). An outline of the HB52E649E12 is 168-pin sock-
et type package (dual lead out). Therefore, the HB52E649E12 makes high density mounting possible without
surface mount technology. The HB52E649E12 provides common data inputs and outputs. Decoupling ca-
pacitors are mounted beside each TSOP on the module board.
Features
Fully compatible with: JEDEC standard outline 8-byte DIMM
—
: Intel PCB Reference design (Rev.1.2)
168-pin socket type package (dual lead out)
— Outline: 133.37 mm (Length)
×
43.18 mm (Height)
×
4.00 mm (Thickness)
— Lead pitch: 1.27 mm
3.3 V power supply
Clock frequency: 100 MHz (max)
LVTTL interface
Data bus width:
×
72 ECC
Single pulsed RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
— Sequential
— Interleave
Programmable CE latency
: 3/4 (HB52E649E12-A6B)
_
: 4 (HB52E649E12-B6B)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52F169E1 | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| HB52F649E1 | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649E1-75B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649E1 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
| HB52F88EM | 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52E649E12-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649E12-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52E649EN-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E649EN-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus |
| HB52E88EM-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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