參數(shù)資料
型號： GS8180S36
廠商： GSI TECHNOLOGY
英文描述： 512K x 36Bit Separate I/O Sigma DDR SRAM(512K x 36位獨立I/O接口雙數(shù)據速率讀和寫模式靜態(tài)ΣRAM)
中文描述： 為512k × 36Bit分離I / O西格瑪?shù)腄DR SRAM的（為512k × 36位獨立的I / O接口雙數(shù)據速率讀和寫模式靜態(tài)ΣRAM）
文件頁數(shù)： 31/32頁
文件大小： 853K
代理商： GS8180S36
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
31/32
2000, Giga Semiconductor, Inc.
A
Advanced Information
GS8180S09/18/36B-333/300/275/250
Ordering Information—GSI Sigma RAM
Org
Part Number
1
Type
Package
Speed
(MHz)
T
A3
512Kx 36
GS8180
S
36B-333
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
333
C
512Kx 36
GS8180
S
36B-300
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
300
C
512Kx 36
GS8180
S
36B-275
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
275
C
512Kx 36
GS8180
S
36B-250
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
250
C
512Kx 36
GS8180
S
36B-333I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
333
I
512Kx 36
GS8180
S
36B-300I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
300
I
512Kx 36
GS8180
S
36B-275I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
275
I
512Kx 36
GS8180
S
36B-250I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
250
I
1M x 18
GS8180
S
18B-333
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
333
C
1M x 18
GS8180
S
18B-300
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
300
C
1M x 18
GS8180
S
18B-275
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
275
C
1M x 18
GS8180
S
18B-250
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
250
C
1M x 18
GS8180
S
18B-333I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
333
I
1M x 18
GS8180
S
18B-300I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
300
I
1M x 18
GS8180
S
18B-275I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
275
I
1M x 18
GS8180
S
18B-250I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
250
I
2Mx 9
GS8180
S
09B-333
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
333
C
2Mx 9
GS8180
S
09B-300
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
300
C
2Mx 9
GS8180
S
09B-275
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
275
C
2Mx 9
GS8180
S
09B-250
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
250
C
2Mx 9
GS8180
S
09B-333I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
333
I
2Mx 9
GS8180
S
09B-300I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
300
I
2Mx 9
GS8180
S
09B-275I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
275
I
2Mx 9
GS8180
S
09B-250I
Separate I/O
Σ
RAM
1 mm Pitch, 209-Pin BGA
250
I
Notes:
1.
2.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS818x36B-300T.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
相關PDF資料
PDF描述
GS8180S18 1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位獨立I/O接口雙數(shù)據速率讀和寫模式靜態(tài)ΣRAM)
GS8180S09 2Mb x 9Bit Separate I/O Sigma DDR SRAM(2M x 9位獨立I/O接口雙數(shù)據速率讀和寫模式靜態(tài)ΣRAM)
GS820322T-138 64K x 32 2M Synchronous Burst SRAM
GS82032Q-100 64K x 32 2M Synchronous Burst SRAM
GS82032Q-117 64K x 32 2M Synchronous Burst SRAM
相關代理商/技術參數(shù)
參數(shù)描述
GS8182D08BD-167 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 16MBIT 2MX8 0.5NS 165FPBGA - Trays
GS8182D08BD-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 16MBIT 2MX8 0.45NS 165FPBGA - Trays
GS8182D08BD-375 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 16MBIT 2MX8 0.45NS 165FPBGA - Trays
GS8182D09BD-400 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 18MBIT 2M X 9 0.45NS 165FPBGA - Trays
GS8182D18BD-167 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 18MBIT 1MX18 0.5NS 165FPBGA - Trays
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*