參數(shù)資料
型號(hào)： EN29LV160B-90TIP
廠商： Eon Silicon Solution Inc.
英文描述： 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述： 16兆位（2048K × 8位/ 1024K x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只
文件頁(yè)數(shù)： 45/45頁(yè)
文件大?。?/td> 438K
代理商： EN29LV160B-90TIP
This Data Sheet may be revised by subsequent versions
2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
9
EN29LV160
Rev. A, Issue Date: 2004/03/30
To access the autoselect codes in-system; the host system can issue the autoselect command via
the command register, as shown in the Command Definitions table. This method does not require
VID. See “Command Definitions” for details on using the autoselect mode.
Write Mode
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is
not required to provide further
controls or timings. The device automatically provides internally generated program pulses and verifies
the programmed cell margin. The Command Definitions in Table 5 show the address and data
requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the device then returns to reading array data and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. See “Write Operation Status” for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt the operation and set DQ5 to “1”, or cause the
Data# Polling algorithm to indicate the operation was successful. However, a succeeding read will show
that the data is still “0”. Only erase operations can convert a “0” to a “1”.
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector. The
hardware sector unprotection feature re-enables both program and erase operations in previously
protected sectors.
There are two methods to enabling this hardware protection circuitry. The first one requires only
that the RESET# pin be at VID and then standard microprocessor timings can be used to enable or
disable this feature. See Flowchart 7a and 7b for the algorithm and Figure 12 for the timings.
When doing Sector Unprotect, all the other sectors should be protected first.
The second method is meant for programming equipment. This method requires VID be applied to
both OE# and A9 pin and non-standard microprocessor timings are used. This method is described
in a separate document called EN29LV160 Supplement, which can be obtained by contacting a
representative of Eon Silicon Solution, Inc.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected
sector groups to change data while in-system. The Sector Unprotect
mode is activated by setting the RESET# pin to VID. During this mode,
formerly protected sectors can be programmed or erased by simply
selecting the sector addresses. Once is removed from the RESET#
pin, all the previously protected sectors are protected again. See
accompanying figure and timing diagrams for more details.
COMMON FLASH MEMORY
INTERFACE
(CFI)
The
common
flash
interface
(CFI)
specification
outlines
device
and
host
systems software interrogation handshake,
which
allows
specific
vendor-specified
software algorithms to be used for entire
families of devices.
Software support can
Start
Reset#=VID (note 1)
Perform Erase or Program
Operations
Reset#=VIH
Temporary Sector
Unprotect Completed (note 2)
Notes:
1. All protected sectors unprotected.
2. Previously protected sectors protected
again.
相關(guān)PDF資料
PDF描述
EN29LV160B-90TI 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160B-90TP 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160B-90T 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160T-70B 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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參數(shù)描述
EN29LV160BB-70BIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash 制造商:Eon Silicon Solution Inc 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash
EN29LV160BT-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash
EN29LV160CB-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:FLASH, 3V Read Program Erase 16 Megabit (2M x 8 / 1M x 16) 70ns TSOP
EN29LV320AT-70TCP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV320A Series, 32 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash
EN29LV320B-70TCP 制造商:EON SILICON SOLUTION INC 功能描述:32 Megabit, CMOS, 3V, Boot Sector Flash Memory, TSOP-48
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