參數(shù)資料
型號(hào)： EN29LV160B-90TIP
廠商： Eon Silicon Solution Inc.
英文描述： 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述： 16兆位（2048K × 8位/ 1024K x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只
文件頁(yè)數(shù)： 4/45頁(yè)
文件大小： 438K
代理商： EN29LV160B-90TIP
This Data Sheet may be revised by subsequent versions
2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
12
EN29LV160
Rev. A, Issue Date: 2004/03/30
Hardware Data protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the following
hardware data protection measures prevent accidental erasure or programming, which might otherwise be
caused by false system level signals during Vcc power up and power down transitions, or from system
noise.
Low VCC Write Inhibit
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during Vcc
power up and power down. The command register and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The system must
provide the proper signals to the control pins to prevent unintentional writes when Vcc is greater than VLKO.
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on OE ,
CE or WE do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE = VIL,
CE = VIH, or WE = VIH. To initiate a write
cycle, CE and WE must be a logical zero while OE is a logical one. If CE , WE , and OE are all
logical zero (not recommended usage), it will be considered a read.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with CE = VIL, WE = VIL and OE = VIH, the device will not accept commands on the rising edge of
WE .
相關(guān)PDF資料
PDF描述
EN29LV160B-90TI 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160B-90TP 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160B-90T 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160T-70B 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN3P2FRAPC 2 CONTACT(S), GLASS FILLED POLYETHYLENE, FEMALE, CIRCULAR CONNECTOR, SOLDER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29LV160BB-70BIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash 制造商:Eon Silicon Solution Inc 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash
EN29LV160BT-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash
EN29LV160CB-70TIP 制造商:EON SILICON SOLUTION INC 功能描述:FLASH, 3V Read Program Erase 16 Megabit (2M x 8 / 1M x 16) 70ns TSOP
EN29LV320AT-70TCP 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV320A Series, 32 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash
EN29LV320B-70TCP 制造商:EON SILICON SOLUTION INC 功能描述:32 Megabit, CMOS, 3V, Boot Sector Flash Memory, TSOP-48
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