參數(shù)資料
型號: EN29LV160B-90TIP
廠商: Eon Silicon Solution Inc.
英文描述: 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 16兆位(2048K × 8位/ 1024K x 16位)閃存引導扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 28/45頁
文件大?。?/td> 438K
代理商: EN29LV160B-90TIP
This Data Sheet may be revised by subsequent versions
2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
34
EN29LV160
Rev. A, Issue Date: 2004/03/30
AC CHARACTERISTICS
Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings
Notes:
1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address.
2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command
sequence.
tDH
tDS
tBUSY
tWPH
tCH
tWP
tCS
tVCS
tRB
tWC
tAS
tAH
tGHWL
tWHWH2 or tWHWH3
0x2AA
SA
VA
0x55
0x30
Status
DOUT
Addresses
CE#
OE#
WE#
Data
RY/BY#
VCC
0x555 for chip
erase
Erase Command Sequence (last 2 cycles)
Read Status Data (last two cycles)
相關PDF資料
PDF描述
EN29LV160B-90TI 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160B-90TP 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160B-90T 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV160T-70B 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN3P2FRAPC 2 CONTACT(S), GLASS FILLED POLYETHYLENE, FEMALE, CIRCULAR CONNECTOR, SOLDER
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