參數(shù)資料
型號: EN29LV160B-90TIP
廠商: Eon Silicon Solution Inc.
英文描述: 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 16兆位(2048K × 8位/ 1024K x 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 26/45頁
文件大?。?/td> 438K
代理商: EN29LV160B-90TIP
This Data Sheet may be revised by subsequent versions
2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
32
EN29LV160
Rev. A, Issue Date: 2004/03/30
Table 14. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate
CE Controlled Writes
Parameter
Symbols
Speed Options
JEDEC
Standard
Description
-70
-90
Unit
tAVAV
tWC
Write Cycle Time
Min
70
90
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
30
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tOEH
Output Enable
Read
0
ns
Hold Time
Toggle and
Data Polling
10
ns
tGHEL
Read Recovery Time before
Write ( OE High to CE Low)
Min
0
ns
tWLEL
tWS
WE SetupTime
Min
0
ns
tEHWH
tWH
WE Hold Time
Min
0
ns
tELEH
tCP
Write Pulse Width
Min
35
45
ns
tEHEL
tCPH
Write Pulse Width High
Min
20
ns
Typ
8
s
tWHWH1 tWHWH1
Programming Operation
(Byte AND word mode)
Max
300
s
Typ
0.5
s
tWHWH2 tWHWH2
Sector Erase Operation
Max
10
s
Typ
17.5
s
tWHWH3 tWHWH3
Chip Erase Operation
Max
s
tVCS
Vcc Setup Time
Min
50
s
tVIDR
Rise Time to VID
Min
500
ns
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EN29LV160B-90TI 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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