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參數(shù)資料
| 型號： | EBD26UC6AKSA-6B-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | Single Pole Normally Open: 1-Form-A |
| 中文描述： | 32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200 |
| 封裝： | LEAD FREE, SODIMM-200 |
| 文件頁數(shù)： | 11/19頁 |
| 文件大小： | 213K |
| 代理商： | EBD26UC6AKSA-6B-E |
EBD26UC6AKSA-E
Preliminary Data Sheet E0605E10 (Ver. 1.0)
11
DC Characteristics 1 (TA = 0 to 70°C, VDD = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
IDD0
-6B
-7A, -7B
1320
1200
mA
CKE
≥
VIH,
tRC = tRC (min.)
CKE
≥
VIH, BL = 4,
CL = 2.5,
tRC = tRC (min.)
1, 2, 9
Operating current
(ACTV-READ-PRE)
IDD1
-6B
-7A, -7B
1560
1440
mA
1, 2, 5
Idle power down standby current
IDD2P
48
mA
CKE
≤
VIL
4
Floating idle standby current
IDD2F
-6B
-7A, -7B
-6B
-7A, -7B
560
480
480
400
mA
CKE
≥
VIH, /CS
≥
VIH,
DQ, DQS, DM = VREF
≥
VIH, /CS
≥
VIH,
CKE
4, 5
Quiet idle standby current
IDD2Q
mA
Active power down
standby current
IDD3P
320
mA
CKE
≤
VIL
3
Active standby current
IDD3N
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
880
800
2080
1840
2080
1840
3200
2800
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 2.5
CKE
≥
VIH, BL = 2,
CL = 2.5
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
mA
1, 2, 5, 6
IDD4W
mA
1, 2, 5, 6
Auto refresh current
IDD5
mA
Self refresh current
IDD6
48
mA
Operating current
(4 banks interleaving)
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. DQ, DM and DQS transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycles.
10. Command/Address stable at
≥
VIH or
≤
VIL.
IDD7A
-6B
-7A, -7B
3240
2800
mA
BL = 4
1, 5, 6, 7
DC Characteristics 2 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Note
Input leakage current
ILI
–16
16
μA
VDD
≥
VIN
≥
VSS
Output leakage current
ILO
–10
10
μA
VDD
≥
VOUT
≥
VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
1
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
1
Note: 1. DDR SDRAM component specification.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EBD26UC6AKSA-7A-E | Single Pole Normally Open: 1-Form-A, 400V |
| EBD26UC6AKSA-6B | 256MB DDR SDRAM SO DIMM (32M words x 64 bits, 2 Banks) |
| EBD26UC6AKSA | Single Pole Normally Open: 1-Form-A |
| EBD26UC6AKSA-7A | Single Pole Normally Open: 1-Form-A, 800V |
| EBD26UC6AKSA-7B | Single Pole Normally Open: 1-Form-A |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBD26UC6AKSA-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM SO DIMM (32M words x 64 bits, 2 Banks) |
| EBD26UC6AKSA-7A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM SO-DIMM (32M words x 64 bits, 2 Ranks) |
| EBD26UC6AKSA-7B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM SO DIMM (32M words x 64 bits, 2 Banks) |
| EBD26UC6AKSA-7B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM SO-DIMM (32M words x 64 bits, 2 Ranks) |
| EBD26UC6AKSA-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM SO-DIMM (32M words x 64 bits, 2 Ranks) |
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