參數(shù)資料
型號(hào)： EBD26UC6AKSA-6B-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： Single Pole Normally Open: 1-Form-A
中文描述： 32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
封裝： LEAD FREE, SODIMM-200
文件頁(yè)數(shù)： 10/19頁(yè)
文件大?。?/td> 213K
代理商： EBD26UC6AKSA-6B-E
EBD26UC6AKSA-E
Preliminary Data Sheet E0605E10 (Ver. 1.0)
10
Electrical Specifications
All voltages are referenced to VSS (GND).
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–1.0 to +3.6
V
Supply voltage relative to VSS
VDD
–1.0 to +3.6
V
Short circuit output current
IO
50
mA
Power dissipation
PD
8
W
Operating ambient temperature
TA
0 to +70
°C
1
Storage temperature
Tstg
–55 to +125
°C
Note: 1. DDR SDRAM component specification.
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = 0 to +70°C) (DDR SDRAM Compoment Specification)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD, VDDQ
2.3
2.5
2.7
V
1
VSS
0
0
0
V
Input reference voltage
VREF
0.49
×
VDDQ
0.50
×
VDDQ 0.51
×
VDDQ
V
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
Input high voltage
VIH (DC)
VREF + 0.15
—
VDDQ + 0.3
V
2
Input low voltage
VIL (DC)
–0.3
—
VREF – 0.15
V
3
Input voltage level,
CK and /CK inputs
Input differential cross point
voltage, CK and /CK inputs
Input differential voltage,
CK and /CK inputs
Notes: 1. VDDQ must be lower than or equal to VDD.
2. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
3. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
4. VIN (DC) specifies the allowable DC execution of each differential input.
5. VID (DC) specifies the input differential voltage required for switching.
6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
VIN (DC)
–0.3
—
VDDQ + 0.3
V
4
VIX (DC)
0.5
×
VDDQ
0.2V
0.5
×
VDDQ
0.5
×
VDDQ + 0.2V V
VID (DC)
0.36
—
VDDQ + 0.6
V
5, 6
相關(guān)PDF資料
PDF描述
EBD26UC6AKSA-7A-E Single Pole Normally Open: 1-Form-A, 400V
EBD26UC6AKSA-6B 256MB DDR SDRAM SO DIMM (32M words x 64 bits, 2 Banks)
EBD26UC6AKSA Single Pole Normally Open: 1-Form-A
EBD26UC6AKSA-7A Single Pole Normally Open: 1-Form-A, 800V
EBD26UC6AKSA-7B Single Pole Normally Open: 1-Form-A
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EBD26UC6AKSA-7A 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM SO DIMM (32M words x 64 bits, 2 Banks)
EBD26UC6AKSA-7A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM SO-DIMM (32M words x 64 bits, 2 Ranks)
EBD26UC6AKSA-7B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM SO DIMM (32M words x 64 bits, 2 Banks)
EBD26UC6AKSA-7B-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM SO-DIMM (32M words x 64 bits, 2 Ranks)
EBD26UC6AKSA-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB DDR SDRAM SO-DIMM (32M words x 64 bits, 2 Ranks)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*