參數(shù)資料
型號: C1210C104K5RACTR
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifiers
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁數(shù): 7/16頁
文件大?。?/td> 596K
代理商: C1210C104K5RACTR
MW4IC001NR4 MW4IC001MR4
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 1990 MHz
η
D
1990
0
40
1930
35
11
IRL
G
ps
IMD
f1, FREQUENCY (MHz)
Figure 10. Two-Tone Performance versus
Frequency
I
I
I
I
35
30
25
20
15
10
5
1940
1950
1960
1970
1980
14
17
20
23
26
29
32
1.3
14.4
0.1
56
G
ps
P
out
, OUTPUT POWER (WATTS)
Figure 11. CW Performance versus Output
Power
Gp
V
DD
= 28 Vdc
I
DQ
= 12 mA
f = 1990 MHz
14.0
13.6
13.2
12.8
12.4
0.2 0.3
0.4
0.5
0.6
0.7
0.8 0.9
1.0
1.1 1.2
48
40
32
24
16
1
60
30
0.01
I
DQ
= 20 mA
16 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 12. Intermodulation Distortion versus
Output Power
I
I
V
DD
= 28 Vdc
f1 = 1990 MHz, f2 = 1990.1 MHz
TwoTone Measurement
100 kHz Tone Spacing
12 mA
9.6 mA
35
40
45
50
55
0.1
1
30
0.01
3rd Order
OUTPUT POWER (WATTS) PEP
Figure 13. Intermodulation Distortion
Products versus Output Power
I
I
7th Order
5th Order
V
DD
= 28 Vdc
I
DQ
= 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz
TwoTone Measurement, 100 kHz Tone Spacing
35
40
45
50
55
60
65
70
75
0.1
1
30
0.01
10 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 14. Third Order Intermodulation
Distortion versus Output Power
T
I
V
DD
= 28 Vdc
I
DQ
= 12 mA
f1 = 1990 MHz
f2 = f1 + Tone Spacing
TwoTone Measurement
100 kHz
35
40
45
50
55
60
0.1
1 MHz
P1dB
V
DD
= 28 Vdc, P
out
= 0.9 W (PEP), I
DQ
= 12 mA
TwoTone Measurement, 100 kHz Tone Spacing
η
D
η
D
,
p
,
η
D
,
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