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參數(shù)資料
| 型號： | C1210 |
| 廠商： | IMP INC. |
| 英文描述： | Process C1210 CMOS 1.2mm Zero Threshold Devices |
| 中文描述： | 1.2mm的過程C1210零閾值的CMOS器件 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 35K |
| 代理商： | C1210 |
47
IMP, Inc.
Process C1210
CMOS 1.2
μ
m
Zero Threshold Devices
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
N
γ
N
β
N
Leff
N
W
N
BVDSS
N
VTF
P(N)
Minimum
0.55
Typical
0.75
0.34
75
1.0
0.6
Maximum
0.95
Unit
V
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
Comments
100x1.2
μ
m
100x1.2
μ
m
100x100
μ
m
100x1.2
μ
m
Per side
64
0.8
86
1.2
9
10
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
P
γ
P
β
P
Leff
P
W
P
BVDSS
P
VTF
P(P)
Minimum
–0.7
Typical
–0.9
0.38
25
1.1
0.8
Maximum
–1.1
Unit
V
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
Comments
100x1.2
μ
m
100x1.2
μ
m
100x100
μ
m
100x1.2
μ
m
Per side
21
0.9
29
1.3
–9.0
–10.0
Zero Vt N-Channel Transis.
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Symbol
VT
ZLN
γ
ZLN
β
ZLN
I
DSATZN
Minimum
0.00
Typical
0.15
0.348
90
34
Maximum
0.30
Unit
V
V
1/2
μ
A/V
2
mA
Comments
100x100
μ
m
100x100
μ
m
100x100
μ
m
100x1.5
μ
m
75
28
105
40
Zero Vt P-Channel Transis.
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Symbol
VT
ZLP
γ
ZLP
β
ZLP
I
DSATZP
Minimum
–0.3
21
–11
Typical
–0.1
0.36
26
–15
Maximum
0.1
31
–19
Unit
V
V
1/2
μ
A/V
2
mA
Comments
100x100
μ
m
100x100
μ
m
100x100
μ
m
100x1.5
μ
m
Electrical Characteristics
T=25
o
C Unless otherwise noted
ISO 9001 Registered
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