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參數(shù)資料
| 型號： | C1226 |
| 廠商： | IMP INC. |
| 英文描述： | CMOS 1.2um 100V CMOS, Double Metal - Double Poly |
| 中文描述： | 100V的的CMOS 1.2um的CMOS，雙金屬-雙聚 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 51K |
| 代理商： | C1226 |
69
2001 IMP, Inc.
Process C1226
CMOS 1.2
μ
m
100V CMOS, Double Metal - Double Poly
Electrical Characteristics
T = 25
o
C Unless otherwise noted
Maximum
Unit
ISO 9001 Registered
Symbol
Minimum
Typical
Comments
N-Channel High Voltage Transistor
Threshold Voltage
Punch Through Voltage
ON Resistance
Operating Voltage
HVT
N
HVBVDSS
N
HVPR
0N
0.70
120
550
0.90
1.10
V
V
700
850
W/L = 147/5
V
GS
= 5V
V
DS
= 100V
N-Channel Low Voltage Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
VT
N
γ
N
β
N
Leff
N
W
N
BVDSS
N
VTFP
N
0.30
0.45
0.475
78
1.35
0.4
12
15
0.65
V
100x1.5
μ
m
100x1.5
μ
m
100x100
μ
m
100x1.5
μ
m
Per side
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
64
92
5
8
Symbol
Minimum
Typical
Maximum
Unit
Comments
P-Channel High Voltage Transistor
Threshold Voltage
Punch Through Voltage
ON Resistance
Operating Voltage
HVT
P
HVBVDSS
P
HVPR
0N
–0.70
–120
2000
–0.90
–1.10
V
V
2500
V
GS
= 5V
V
DS
= 100V
3000
W/L = 139/5
V
P-Channel Low Voltage Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
VT
P
γ
P
β
P
Leff
P
W
P
BVDSS
P
VTF
P(P)
-0.65
–0.45
0.6
25
1.5
0.4
–12
–12
–0.30
V
100x1.5
μ
m
100x1.5
μ
m
100x100
μ
m
100x1.5
μ
m
Per side
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
20
30
–5
–8
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