參數(shù)資料
型號(hào)： C1226
廠商： IMP INC.
英文描述： CMOS 1.2um 100V CMOS, Double Metal - Double Poly
中文描述： 100V的的CMOS 1.2um的CMOS，雙金屬-雙聚
文件頁數(shù)： 2/2頁
文件大?。?/td> 51K
代理商： C1226
70
C1226-11-01
Min Channel Width
Min Spacing, Active Region, 5V
Poly1 Width/Space
Poly2 Width/Space
Contact Width/Space
Via Width/Space
Metal-1 Width/Space
Metal-2 Width/Space
4.0
μ
m
2.0
μ
m
1.5/2.0
μ
m
3.0/2.0
μ
m
1.5/1.5
μ
m
1.5/1.5
μ
m
2.5/1.5
μ
m
2.5/1.5
μ
m
Diffusion Overlap of Contact
Poly Overlap of Contact
Contact to Poly Space
Metal-1 Overlap of Contact
Minimum Pad Opening
Minimum Pad to Pad Spacing
Minimum Pad Pitch
1.0
μ
m
1.0
μ
m
1.5
μ
m
1.0
μ
m
65x65
μ
m
5.0
μ
m
80
μ
m
Diffusion & Thin Films
Starting Material p<100>
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
High-Voltage Gate Oxide Th
Gate Oxide Thickness
Interpoly Oxide
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
Minimum
Typical
Maximum
Unit
Comments
ρ
N-well(f)
N+
x
jN+
ρ
P+
x
jP+
HT
GOX
T
GOX
IP
OX
ρ
POLY1
ρ
M1
ρ
M2
T
PASS
1.0
20
1.7
35
0.3
110
0.3
24
24
42.0
30.0
45
29
2.4
50
K
/
/
μ
m
/
μ
m
nm
nm
nm
/
m
/
m
/
nm
n-well
60
150
33.6
50.4
200+900
oxide+nit.
High Voltage Section Rules
Layout Rules
Physical Characteristics
Process C1226
相關(guān)PDF資料
PDF描述
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