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參數(shù)資料
| 型號： | C1227 |
| 廠商： | IMP INC. |
| 英文描述： | ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles |
| 中文描述： | 30V的高壓BiCMOS工藝1.2毫米雙金屬-雙聚 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 28K |
| 代理商： | C1227 |
71
IMP, Inc.
Process C1227
HV BiCMOS 1.2
μ
m
30V Double Metal - Double Poly
Electrical Characteristics
T=25
o
C Unless otherwise noted
Maximum
Unit
ISO 9001 Registered
Symbol
Minimum
Typical
Comments
N-Channel High Voltage Transistor
Threshold Voltage
Punch Through Voltage
ON Resistance
HVT
N
HVBVDSS
P
HVPR
0N
0.7
36
0.9
1.1
V
V
1.4
m
-
cm
2
V
@V
GS
= 5V
V
DS
= 0.1V
Operating Voltage
V
GS
= 5V
V
DS
= 30V
N-Channel Low Voltage Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
VT
N
γ
N
β
N
Leff
N
W
N
BVDSS
N
VTFP
N
0.4
0.50
64.0
1.20
0.6
0.65
75.0
1.35
0.45
0.8
0.80
86.0
1.50
V
100x1.4
μ
m
100x1.4
μ
m
100x100
μ
m
100x1.4
μ
m
Per side
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
8
10
18
Vertical NPN Transistor
Beta
Early Voltage
Cut-Off Frequency
Symbol
h
FE
V
A
f
τ
Minimum
50
Typical
140
34
1.89
Maximum
240
Unit
Comments
4.5x4.5
μ
m
V
GHz
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-2 to Metal-1
Symbol
C
OX
C
M1P
C
MM
Minimum
1.338
0.040
0.043
Typical
1.439
0.046
0.050
Maximum
1.569
0.052
0.057
Unit
fF/
μ
m
2
fF/
μ
m
2
fF/
μ
m
2
Comments
Symbol
Minimum
Typical
Maximum
Unit
Comments
P-Channel High Voltage Transistor
Threshold Voltage
Punch Through Voltage
ON Resistance
HVT
P
HVBVDSS
P
HVPR
0N
–0.7
–36
–0.9
–1.1
V
V
11.0
m
-
cm
2
@V
GS
= –5V
@V
DS
= –0.1V
P-Channel Low Voltage Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
VT
P
γ
P
β
P
Leff
P
W
P
BVDSS
P
VTF
P(P)
–0.8
0.35
20.0
1.35
–0.6
0.50
25.0
1.50
0.40
–0.4
0.65
30.0
1.65
V
100x1.4
μ
m
100x1.4
μ
m
100x100
μ
m
100x1.4
μ
m
Per side
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
–8
–10
–18
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