參數(shù)資料
型號(hào): C1210C104K5RACTR
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifiers
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁(yè)數(shù): 11/16頁(yè)
文件大?。?/td> 596K
代理商: C1210C104K5RACTR
MW4IC001NR4 MW4IC001MR4
11
RF Device Data
Freescale Semiconductor
Figure 23. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
1920
1930
1940
4.238 + j15.142
4.490 + j15.466
4.322 + j15.362
7.764 + j28.829
8.056 + j29.352
8.436 + j29.727
V
DD
= 28 V, I
DQ
= 12 mA, P
out
= 0.9 W PEP
1950
1960
1970
4.605 + j15.711
4.905 + j16.050
4.752 + j15.904
8.809 + j30.249
9.183 + j30.763
9.598 + j31.213
1980
5.071 + j16.236
10.030 + j31.690
1990
5.262 + j16.446
10.546 + j32.237
2000
5.487 + j16.632
11.054 + j32.726
Z
source
=
Test circuit impedance as measured from
gate to ground.
Z
load
=
Test circuit impedance as measured
from drain to ground.
Z
source
f = 1920 MHz
Z
o
= 50
f = 2000 MHz
f = 1920 MHz
f = 2000 MHz
Z
load
f
MHz
Z
source
Z
load
2100
2110
2120
2.667 + j12.903
2.664 + j13.224
2.671 + j13.070
5.892 + j26.374
6.092 + j26.739
6.281 + j27.094
V
DD
= 28 V, I
DQ
= 12 mA, P
out
= 0.9 W PEP
2130
2140
2150
2.694 + j13.431
2.702 + j13.700
2.703 + j13.511
6.540 + j27.510
6.748 + j27.795
6.996 + j28.182
2160
2.745 + j13.952
7.300 + j28.678
2170
2.754 + j14.026
7.562 + j28.987
2180
2.784 + j14.206
7.862 + j29.411
Z
source
=
Test circuit impedance as measured from
gate to ground.
Z
load
=
Test circuit impedance as measured
from drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
source
f = 2180 MHz
f = 2100 MHz
f = 2100 MHz
Z
load
f = 2180 MHz
Z
o
= 50
Zsource
Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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