- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369561 > BUJ103AU (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor(硅擴散功率型晶體管) PDF資料下載
參數(shù)資料
| 型號： | BUJ103AU |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | BUJ103AU |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
,I
CBO
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
CEO
= V
(400V)
V
= 7 V; I
= 0 A
I
= 0 A; I
C
= 10 mA;
L = 25 mH
I
C
= 3.0 A; I
B
= 0.6 A
I
C
= 3.0 A; I
B
= 0.6 A
I
C
= 1 mA; V
= 5 V
I
C
= 500mA; V
= 5 V
I
C
= 2.0 A; V
CE
= 5 V
I
C
= 3.0 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
0.1
0.5
UNIT
mA
mA
I
CEO
I
EBO
V
CEOsust
Collector cut-off current
1
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
-
-
0.1
0.1
-
mA
mA
V
400
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
0.25
0.97
17
22
16
12.5
1.0
1.5
32
32
22
-
V
V
10
13
11
-
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 2.5 A; I
= -I
= 0.5 A;
R
L
= 75 ohms; V
BB2
= 4V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
0.48
2.7
0.27
0.6
3.3
0.35
μ
s
μ
s
μ
s
I
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
1.2
46
1.4
60
μ
s
ns
I
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
1.34
98
1.8
200
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
October 1999
2
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUJ105AX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BUJ106AX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BUJ403AX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BUJ403BX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BUJ403 | Silicon Diffused Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUJ103AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ103AX,127 | 功能描述:兩極晶體管 - BJT SILICON DIFFUSED POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ105A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ105A,127 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ105A127 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。