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參數(shù)資料
| 型號(hào)： | BUJ103AU |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | BUJ103AU |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
D.C. current gain
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.25
12.5
46
MAX.
700
700
400
4
8
50
1.0
-
60
UNIT
V
V
V
A
A
W
V
T
mb
≤
25 C
I
C
B
= 0.6 A
I
C
= 3.0 A; V
CE
= 5 V
I
C
= 2.5 A; I
B1
= 0.4 A
ns
PINNING - SOT533
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
700
400
700
4
8
2
4
50
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
TYP.
-
70
MAX.
2.5
-
UNIT
K/W
K/W
in free air
1
Top view
MBK915
2
3
b
c
e
October 1999
1
Rev 1.100
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| BUJ103AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ103AX,127 | 功能描述:兩極晶體管 - BJT SILICON DIFFUSED POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ105A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ105A,127 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ105A127 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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