- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369532 > BTS282-Z Transient Voltage Suppressor Diodes PDF資料下載
參數(shù)資料
| 型號： | BTS282-Z |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？N通道高速TEMPFET？ |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 270K |
| 代理商： | BTS282-Z |
2000-09-11
4
BTS 282 Z
Electrical Characteristics
Parameter
Symbol
Values
Unit
at
T
j
= 25°C, unless otherwise specified
Dynamic Characteristics
min.
typ.
max.
Forward transconductance
V
DS
>2*
I
D
*
R
DS(on)max
,
I
D
= 80 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Rise time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Turn-off delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
Fall time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
R
G
= 1.3
g
fs
30
70
-
S
C
iss
-
3850
4800
pF
C
oss
-
1090
1357
C
rss
-
570
715
t
d(on)
-
30
45
ns
t
r
-
37
56
t
d(off)
-
70
105
t
f
-
36
55
Gate Charge Characteristics
Gate charge at threshold
V
DD
= 40 V, ID
=
≥
0,1 A ,
V
GS
= 0 to 1 V
Gate charge at 5.0 V
V
DD
= 40 V,
I
D
= 80 A,
V
GS
= 0 to 5 V
Gate charge total
V
DD
= 40 V,
I
D
= 80 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 40 V,
I
D
= 80 A
Q
g(th)
-
3.8
5.7
nC
Q
g(5)
-
92
138
Q
g(total)
-
155
232
V
(plateau)
-
3.4
-
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTS306E3043 | Transient Voltage Suppressor Diodes |
| BTS306E3062A | Transient Voltage Suppressor Diodes |
| BTS307E3062 | Transient Voltage Suppressor Diodes |
| BTS308E3043 | Transient Voltage Suppressor Diodes |
| BTS308E3062 | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS282Z E3180A | 功能描述:MOSFET TEMPFET 49V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BTS282Z E3230 | 功能描述:MOSFET TEMPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BTS282Z_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Speed TEMPFET |
| BTS282ZAKSA1 | 功能描述:MOSFET TEMPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BTS282ZE3180A | 制造商:Rochester Electronics LLC 功能描述:TEMPFET - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。