參數(shù)資料
型號: BLF2022-90
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-2
文件頁數(shù): 6/12頁
文件大?。?/td> 112K
代理商: BLF2022-90
2003 Feb 24
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
handbook, halfpage
Zi
(
)
1.8
1.9
f (GHz)
2.3
3
1
0
2
2
xi
ri
2.1
2.2
MLD835
Fig.8
Input impedance as a function of frequency
(series components); typical values.
V
DS
= 28 V; I
D
= 750 mA; P
L
= 90 W; T
h
= 25
°
C.
handbook, halfpage
ZL
(
)
1.8
1.9
f (GHz)
2.3
2
2
4
0
2
RL
XL
2.1
2.2
MLD836
Fig.9
Load impedance as a function of frequency
(series components); typical values.
V
DS
= 28 V; I
D
= 750 mA; P
L
= 90 W; T
h
= 25
°
C.
handbook, full pagewidth
MGS920
C7
C8
C3
L16
L14
L12
L20
L1
L3
L2
L4
L6
L8
L10
L11
L15
L17
L13
L5
L7
L9
L18
L19
C6
C9
C4
C10
input
50
output
50
C1
C2
C11
C12
R2
F1
C13
C14
VDD
R1
C5
Vgate
Fig.10 Class-AB test circuit at f = 2.2 GHz.
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