參數(shù)資料
型號： BLF2022-90
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁數(shù)： 3/12頁
文件大小： 112K
代理商： BLF2022-90
2003 Feb 24
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Notes
1.
2.
Thermal resistance is determined under specified RF operating conditions.
Depending on mounting conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°
C; R
th j-c
= 0.65 K/W; unless otherwise specified.
Ruggedness in class-AB operation
The BLF2022-90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 28 V; I
DQ
= 750 mA; P
L
= 90 W (CW); f = 2170 MHz.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
65
65
±
15
12
+150
200
V
V
A
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-c
R
th c-h
thermal resistance from junction to case
thermal resistance from case to heatsink
T
h
= 25
°
C; note 1
T
h
= 25
°
C; note 2
0.65
0.2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
6.2
0.1
5.1
MAX.
5.5
15
38
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
V
GS
= 0; I
D
= 2.1 mA
V
DS
= 10 V; I
D
= 210 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±
15 V; V
DS
= 0
V
DS
= 10 V; I
D
= 7.5 A
V
GS
= V
GSth
+ 9 V; I
D
= 7.5 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
65
4.4
27
V
V
μ
A
A
nA
S
pF
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
≤
25
2-tone, class-AB
f
1
= 2170; f
2
= 2170.1
28
750
90 (PEP)
>11
>30
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