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參數(shù)資料
| 型號： | BLF2022-90 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 112K |
| 代理商： | BLF2022-90 |
2003 Feb 24
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
FEATURES
Typical W-CDMA performance at a supply voltage of
28 V and I
DQ
of 750 mA:
– Output power = 11.5 W (AV)
– Gain = 12.5 dB
– Efficiency = 20%
– ACPR =
42 dBc at 3.84 MHz
– d
im
=
36 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
PINNING - SOT502A
PIN
DESCRIPTION
1
2
3
drain
gate
source, connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline.
QUICK REFERENCE DATA
Typical RF performance at T
h
= 25
°
C in a common source class-AB test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
28.5
ACLR
5
(dBc)
2-tone, class-AB
W-CDMA, 3GPP test
model 1, 64 channels
with 66% clipping
f
1
= 2170; f
2
= 2170.1
28
750
90 (PEP)
12.8
35.7
2140
28
750
15 (AV)
13.2
20
40
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLF2043 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF2043,112 | 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF2043,135 | 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF2043F | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF2043F /T3 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS 10W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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