參數(shù)資料
型號: ATAM893T-TKSYD
廠商: Atmel
文件頁數(shù): 87/98頁
文件大?。?/td> 0K
描述: IC MCU FLASH 4K MTP 20SSOP
標(biāo)準(zhǔn)包裝: 830
系列: MARC4
核心處理器: MARC4
芯體尺寸: 4-位
速度: 4MHz
連通性: SSI(2 線,3 線)
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 16
程序存儲器容量: 4KB(4K x 8)
程序存儲器類型: EEPROM
EEPROM 大?。?/td> 64 x 16
RAM 容量: 256 x 4
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 6.5 V
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 20-SOIC(0.209",5.30mm 寬)
包裝: 管件
88
4680C–4BMCU–01/05
ATAM893-D
6.2.3.1
Read One Data Byte
6.2.3.2
Read Two Data Bytes
6.2.3.3
Read n Data Bytes
6.2.3.4
Read Control Bytes
A
→acknowledge, N →no acknowledge; HB: high byte; LB: low byte, R: row address
6.2.3.5
Initializing the Serial Interface to the EEPROM
To prevent unexpected behavior of the EEPROM and its interface it is good practice to use an
initialization sequence after any reset of the circuit. This is performed by writing:
to the serial interface. If the EEPROM acknowledges this sequence it is in a defined state. It may
be necessary to perform this sequence twice.
Start
Control byte
A
Data byte 1
N
Stop
Start
Control byte
A
Data byte 1
A
Data byte 2
N
Stop
Start
Control byte
A
Data byte 1
A
Data byte 2
A
- - -
Data byte n
N
Stop
MSB
LSB
Read low byte first,
address increment
A4
A3
A2
A1
A0
C1
C0
R/NW
Row address
0
1
Byte order
LB(R)
HB(R)
LB(R+1)
HB(R+1)
- - -
LB(R+n)
HB(R+n)
MSB
LSB
Read high byte first,
address decrement
A4
A3
A2
A1
A0
C1
C0
R/NW
Row address
1
0
1
Byte order
HB(R)
LB(R)
HB(R-1)
LB(R-1)
- - -
HB(R-n)
LB(R-n)
Start
“FFh”
A
N Stop
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