參數(shù)資料
型號: AP9T16GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 25 A, 20 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 4/4頁
文件大小: 117K
代理商: AP9T16GJ
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP9T16GH/J
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
Q
G
, Total Gate Charge (nC)
V
G
I
D
=18A
V
DS
=10V
V
DS
=12V
V
DS
=16V
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.00001
0.1
1
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
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