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參數(shù)資料
| 型號： | AP9T16GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 25 A, 20 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 117K |
| 代理商： | AP9T16GJ |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low Gate Charge
BV
DSS
R
DS(ON)
I
D
20V
25m
Ω
25A
▼
Capable of 2.5V gate drive
▼
Single Drive Requirement
RoHS Compliant
▼
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
P
D
@T
C
=25
℃
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃
/W
Data and specifications subject to change without notice
200908052-1/4
AP9T16GH/J
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
±16
25
16
90
Total Power Dissipation
25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
Storage Temperature Range
0.2
Thermal Data
Parameter
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
GD
S
TO-252(H)
G
D
S
TO-251(J)
G
D
S
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| AP9T18GEH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:G-S Diode embedded, Capable of 2.5V gate drive |
| AP9T18GEJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:G-S Diode embedded, Capable of 2.5V gate drive |
| AP9T18GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T19GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge, Capable of 2.5V gate drive |
| AP9U18GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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