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參數(shù)資料
| 型號： | AP9T16GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 25 A, 20 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | AP9T16GJ |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
-
0.01
-
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
-
-
25
m
Ω
V
GS
=2.5V, I
D
=5.2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=18A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=±16V
I
D
=18A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=18A
R
G
=3.3
Ω
,
V
GS
=5V
R
D
Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
-
-
40
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
0.5
-
1.5
V
Forward Transconductance
-
19
-
S
uA
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
1
Drain-Source Leakage Current (T
j
=150
o
C)
-
-
25
uA
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
-
-
±100
nA
-
10
16
nC
Gate-Source Charge
-
3
-
nC
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
-
5
-
nC
-
10
-
ns
Rise Time
-
98
-
ns
Turn-off Delay Time
-
18
-
ns
Fall Time
-
6
-
ns
Input Capacitance
-
870
1390
pF
Output Capacitance
-
160
-
pF
Reverse Transfer Capacitance
-
120
-
pF
Gate Resistance
f=1.0MHz
-
1.38
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
SD
t
rr
Q
rr
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=18A, V
GS
=0V
I
S
=18A,
V
GS
=0
V
,
dI/dt=100A/μs
-
-
-
1.3
-
V
ns
19
Reverse Recovery Charge
-
10
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9T16GH/J
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