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參數(shù)資料
| 型號(hào)： | AOD413Y |
| 廠商： | ALPHA |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 121K |
| 代理商： | AOD413Y |
AOD413Y
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
D
=-10mA, V
GS
=0V
0
2
4
6
8
10
0
3
6
9
12
15
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-
G
0
250
500
750
1000
0
10
20
30
40
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.0001
40
80
120
160
200
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
P
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
J
T
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
μ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C, T
A
=25°C
V
DS
=-15V
I
D
=-12A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=3°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
A
=25°C
10
μ
s
Alpha & Omega Semiconductor, Ltd.
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| AOD413 | P-Channel Enhancement Mode Field Effect Transistor |
| AOD413L | P-Channel Enhancement Mode Field Effect Transistor |
| AOD417 | P-Channel Enhancement Mode Field Effect Transistor |
| AOD419 | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOD413YL | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AOD414 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD4140 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel SDMOSTM POWER Transistor |
| AOD4142 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel SDMOSTM POWER Transistor |
| AOD4144 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel SDMOSTM Power Transistor |
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