參數(shù)資料
型號(hào): AOD413L
廠商: ALPHA
元件分類: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 120K
代理商: AOD413L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
16.7
40
2.5
Max
25
50
3
R
θ
JL
Maximum Junction-to-Case
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
W
T
A
=70°C
1.6
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
T
A
=25°C
P
DSM
2.5
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25°C
T
C
=100°C
P
D
W
Avalanche Current
C
Continuous Drain
Current
B,G
Maximum
-40
±20
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
G
T
A
=100°C
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
Gate-Source Voltage
Pulsed Drain Current
-12
-12
-30
-12
30
50
°C
25
A
AOD413
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -40V
I
D
= -12A (V
GS
= -10V)
R
DS(ON)
< 45m
(V
GS
= -10V)
R
DS(ON)
< 69m
(V
GS
= -4.5V)
General Description
The AOD413 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard Product
AOD413 is Pb-free (meets ROHS & Sony 259
specifications). AOD413L is a Green Product
ordering option. AOD413 and AOD413L are
electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.
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