參數(shù)資料
型號: AOD419
廠商: ALPHA
元件分類: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -溝道增強型場效應(yīng)晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 127K
代理商: AOD419
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
16.7
40
2.5
Max
25
50
3
R
θ
JL
Maximum Junction-to-Case
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
W
T
A
=70°C
1.6
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
T
A
=25°C
P
DSM
2.5
A
mJ
Repetitive avalanche energy L=0.3mH
C
Power Dissipation
B
T
C
=25°C
T
C
=100°C
P
D
W
Avalanche Current
C
Continuous Drain
Current
B,G
Pulsed Drain Current
Maximum
-40
±20
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
G
T
A
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
Gate-Source Voltage
-20
-18
-60
-20
60
50
°C
25
A
AOD419
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -40V
I
D
= -20A (V
GS
= -10V)
R
DS(ON)
< 40m
(V
GS
= -10V)
R
DS(ON)
< 65m
(V
GS
= -4.5V)
General Description
The AOD419 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard Product
AOD419 is Pb-free (meets ROHS & Sony 259
specifications). AOD419L is a Green Product
ordering option. AOD419 and AOD419L are
electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected
to Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.
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