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參數(shù)資料
| 型號(hào)： | AOD434L |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 436K |
| 代理商： | AOD434L |
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
16.7
40
1.9
Max
25
50
2.5
R
θ
JC
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±12
18
18
30
18
37
60
30
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
Gate-Source Voltage
Continuous Drain
Current
G
Drain-Source Voltage
Power Dissipation
B
T
C
=25°C
T
C
=100°C
P
D
Maximum
20
Units
T
C
=25°C
T
C
=100°C
W
A
P
DSM
°C
2.5
1.6
-55 to 175
I
D
A
mJ
W
AOD434
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 18A (V
GS
= 10V)
R
DS(ON)
< 14m
(V
GS
= 10V)
R
DS(ON)
< 16m
(V
GS
= 4.5V)
R
DS(ON)
< 21m
(V
GS
= 2.5V)
R
DS(ON)
< 30m
(V
GS
= 1.8V)
ESD Rating: 2KV HBM
General Description
The AOD434 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected to
a 2KV HBM rating.
Standard Product AOD434 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD434L is a Green Product ordering option.
AOD434 and AOD434L are electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AOD436 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD436L | N-Channel Enhancement Mode Field Effect Transistor |
| AOD438 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD438L | N-Channel Enhancement Mode Field Effect Transistor |
| AOD446 | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOD436 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD436L | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD438 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD438L | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD442 | 功能描述:MOSFET N-CH 60V 38A TO-252 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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