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參數(shù)資料
| 型號： | AOD438 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 162K |
| 代理商： | AOD438 |
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
14.2
39
0.8
Max
20
50
1.5
R
θ
JC
2.5
1.6
W
T
A
=70°C
W
Junction and Storage Temperature Range
A
P
D
°C
100
50
-55 to 175
T
C
=100°C
T
A
=25°C
I
D
Continuous Drain
Current
B,G
Pulsed Drain Current
Maximum
30
±20
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
G
T
C
=100°C
B
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Steady-State
Steady-State
85
63
200
30
112
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Power Dissipation
A
P
DSM
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
≤
10s
R
θ
JA
A
mJ
AOD438
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 3.5m
(V
GS
= 10V)
R
DS(ON)
< 5.5m
(V
GS
= 4.5V)
General Description
The AOD438 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOD438 is Pb-free (meets ROHS
& Sony 259 specifications). AOD438L is a Green
Product ordering option. AOD438 and AOD438L are
electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
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PDF描述 |
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| AOD438L | N-Channel Enhancement Mode Field Effect Transistor |
| AOD446 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD446L | N-Channel Enhancement Mode Field Effect Transistor |
| AOD448 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD448L | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOD438L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD442 | 功能描述:MOSFET N-CH 60V 38A TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AOD442L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD444 | 功能描述:MOSFET N-CH 60V 12A TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AOD444L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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