參數(shù)資料
型號: AOD413Y
廠商: ALPHA
元件分類: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -溝道增強(qiáng)型場效應(yīng)晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 121K
代理商: AOD413Y
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
16.7
40
2.5
Max
25
50
3
R
θ
JL
°C
V
V
±20
-12
-12
-30
25
2.5
1.6
A
-12
30
50
Gate-Source Voltage
Continuous Drain
Current
B,G
Drain-Source Voltage
-40
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Maximum
Units
Parameter
T
A
=25°C
G
T
A
=100°C
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
P
DSM
A
mJ
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
P
D
W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Steady-State
Steady-State
°C/W
°C/W
W
T
A
=70°C
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
AOD413Y
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -40V
I
D
= -12A (V
GS
= -10V)
R
DS(ON)
< 45m
(V
GS
= -10V)
R
DS(ON)
< 69m
(V
GS
= -4.5V)
General Description
The AOD413Y uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard product
AOD413Y is Pb free, inside and out. It uses Pb-free
die attach and plating material(meets ROHS & Sony
259 specifications). AOD413YL is a Green Product
ordering option. AOD413Y and AOD413YL are
electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.
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