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參數(shù)資料
| 型號(hào)： | AOD4112 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大小： | 123K |
| 代理商： | AOD4112 |
AOD4112
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
30
60
90
120
0.000001
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(
T
A
=125°C
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
P
T
A
=25°C
0
5
10
15
20
25
0
25
50
75
T
CASE
(°C)
100
125
150
175
Figure 14: Current De-rating (Note B)
C
D
(
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
P
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
J
T
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=55°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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|---|---|
| AOD411N-B | 制造商:IDEC CORPORATION 功能描述:TWTD JUMBO MUSHRM PB |
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| AOD411N-R-ENGRAVED | 制造商:IDEC CORPORATION 功能描述:AOD411N-R-ENGRAVED |
| AOD411N-Y | 制造商:IDEC CORPORATION 功能描述:TWTD JUMBO MUSHRM PB |
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