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參數(shù)資料
| 型號： | AOD4112 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 123K |
| 代理商： | AOD4112 |
AOD4112
T
C
=100°C
T
A
=25°C
-55 to 175
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
(
V
GS
=3V
4.5V
3.5V
4V
10V
0
5
10
15
20
25
30
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
2.0
6.0
10.0
14.0
18.0
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
V
GS
=10V
1.0E-05
1.0E-04
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
V
SD
(Volts)
0.6
0.8
1.0
Figure 6: Body-Diode Characteristics
I
S
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
V
GS
=4.5V
5
10
15
20
25
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
I
D
=20A
25°C
125°C
I
D
=20A
V
GS
=10V
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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