參數(shù)資料
型號: AM49LV128BML11NT
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA64
封裝: 12 X 9 MM, FBGA-64
文件頁數(shù): 79/98頁
文件大小: 1016K
代理商: AM49LV128BML11NT
June 17, 2004
Am49LV128BM
77
OPERATING CHARACTERISTICS (OVER SPECIFIED TEMPERATURE RANGE)
Note:
1.
Typical values are measured at Vcc=Vcc Typ., TA=25°C and not
100% tested.
This parameter is specified with the outputs disabled to avoid
external loading effects. The user must add current required to
drive output capacitance expected in the actual system.
2.
3.
This device assumes a standby mode if the chip is disabled
(either CE# high or both UB# and LB# high). In order to achieve
low standby current all inputs must be within 0.2V of either VCC
or VSS.
Item
Symbol
V
CC
V
CCQ
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
Test Condition
Min
2.7
2.7
Typ
(Note 1)
3.0
3.0
Max
3.1
V
CC
Unit
V
V
V
V
V
V
μA
μA
Supply Voltage
Supply Voltage for I/O
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@1 μs Cycle Time (Note 2)
Read/Write Operating Supply Current
@65 ns Cycle Time (Note 2)
Page Mode Operating Supply Current
@65 ns Cycle Time (Note 2)
0.8V
CCQ
-0.2
0.8V
CCQ
V
CCQ
+0.2
0.2V
CCQ
I
OH
= 0.5mA
I
OL
= -0.5mA
V
IN
= 0 to V
CC
OE# = V
IH
or Chip Disabled
V
CC
= 3.1V, V
IN
=CMOS
levelsChip Enabled, I
OUT
= 0
V
CC
= 3.1V, V
IN
=CMOS levels
Chip Enabled, I
OUT
= 0
V
CC
= 3.1V, V
IN
=CMOS levels
Chip Enabled, I
OUT
= 0
V
CC
= 3.1V, V
IN
=CMOS levels
Chip Disabled
0.2V
CCQ
1
1
-1
-1
I
CC1
3.0
mA
I
CC2
25.0
mA
I
CC2
25.0
mA
Maximum Standby Current (Note 3)
I
SB1
80
1
20
μA
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