參數(shù)資料
型號: AM49LV128BML11NT
廠商: SPANSION LLC
元件分類: 存儲(chǔ)器
英文描述: 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA64
封裝: 12 X 9 MM, FBGA-64
文件頁數(shù): 53/98頁
文件大?。?/td> 1016K
代理商: AM49LV128BML11NT
June 17, 2004
Am49LV128BM
51
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words.
4. Effective write buffer specification is based upon a 16-word write buffer operation.
Parameter
15, 11
JEDEC
Std.
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
65
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
15
μs
Effective Accelerated Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
11.8
μs
Program Operation (Note 2)
Word
Typ
60
μs
Accelerated Programming
Operation (Note 2)
Word
Typ
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
相關(guān)PDF資料
PDF描述
AM49LV128BML15NS 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
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