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參數(shù)資料
| 型號： | AM49LV128BML11NT |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | 128 Megabit (8 M x 16-Bit) MirrorBit⑩ Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit) |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA64 |
| 封裝： | 12 X 9 MM, FBGA-64 |
| 文件頁數(shù)： | 60/98頁 |
| 文件大?。?/td> | 1016K |
| 代理商： | AM49LV128BML11NT |
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58
Am49LV128BM
June 17, 2004
PSRAM DC CHARACTERISTICS
Notes:
1. All voltages are referenced to V
SS
.
2. DC Characteristics are measured after following POWER-UP timing.
3. I
OUT
depends on the output load conditions.
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Input Leakage
Current
I
LI
V
IN
= V
SS
to V
DD
-1.0
+1.0
μ
A
Output Leakage
Current
I
LO
V
OUT
= V
SS
to V
DD
, Output Disable
-1.0
+1.0
μ
A
Output High
Voltage Level
V
OH
V
DD
= V
DD
(min), I
OH
= –0.5mA
2.4
–
V
Output Low
Voltage Level
V
OL
I
OL
= 1 mA
–
0.4
V
V
DD
Power Down
Current
I
DDPS
V
DD
= V
DD
max., V
IN
= V
IH
or V
IL
,
CE2
≤
0.2V
SLEEP
–
10
μ
A
I
DDP8
8M Partial
–
50
μ
A
V
DD
Standby
Current
I
DDS
V
DD
= V
DD
max., V
IN
= V
IH
or V
IL
, CE1#
–
1.5
mA
I
DDS1
V
DD
= V
DD
max., V
IN
≤
0.2 V or V
IN
≥
V
DD
– 0.2 V,
CE1# =CE2
≥
VDD – 0.2V
–
80
μ
A
V
DD
Active
Current
I
DDA1
V
DD
= V
DD
max., V
IN
= V
IH
or V
IL
,
CE1# = V
IL
and CE2 = V
IH
,
I
OUT
= 0 mA
t
RC
/t
WC
=
minimum
–
30
mA
I
DDA2
t
RC
/t
WC
= 1
μ
s
–
3
mA
V
DD
Page Read
Current
I
DDA3
V
DD
= V
DD
max., V
IN
= V
IH
or V
IL
, CE1# = V
IL
and CE2
= V
IH
, I
OUT
= 0 mA, t
PRC
= min.
–
10
mA
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