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參數(shù)資料
| 型號： | 2SK3569 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型（喝醉MOSVI） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 150K |
| 代理商： | 2SK3569 |
2SK3569
2004-03-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOSVI)
2SK3569
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.54
High forward transfer admittance: |Y
fs
| = 8.5S (typ.)
Low leakage current: I
DSS
= 100
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
(typ.)
A (V
DS
= 600 V)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
600
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
600
V
Gate-source voltage
V
GSS
±
30
V
DC
(Note 1)
I
D
10
Drain current
Pulse (t
=
1 ms)
(Note 1)
I
DP
40
A
Drain power dissipation (Tc
=
25°C)
P
D
45
W
Single pulse avalanche energy
(Note 2)
E
AS
363
mJ
Avalanche current
I
AR
10
A
Repetitive avalanche energy (Note 3)
E
AR
4.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C(initial), L
=
6.36 mH, I
AR
=
10 A, R
G
=
25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3569(Q) | 功能描述:MOSFET N-Ch 600V 10A Rdson 0.75 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3569(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 600V, 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3569(S4TET,Q,M) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3569(S4TETV,X,M | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
| 2SK3569(S4TETV,X,S | 制造商:Toshiba America Electronic Components 功能描述: |
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