參數(shù)資料
型號： 2SK3581-01L
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-CHANNEL SILICON POWER MOSFET
中文描述： 16 A, 500 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 263K
代理商： 2SK3581-01L
1
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Symbol
V
DS
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
Ratings
Unit
V
A
A
V
A
mJ
kV/μs
kV/μs
W
500
±16
±64
±30
16
212.2
20
5
1.67
225
+150
-55 to +150
Operating and storage
temperature range
*1 L=1.52mH, Vcc=50V,Tch=25°C, See to Avalanche Energy Graph *2 Tch =
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3581-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
V
GS
=0V
V
GS
=0V
V
GS
=±30V
I
D
=7A V
GS
=10V
I
D
=7A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=7A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
500
3.0
V
V
μA
nA
S
pF
nC
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.556
75.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
=500V V
ch
=25°C
=400V V
ch
=125°C
V
DS
=0V
V
CC
=250V
I
D
=14A
V
GS
=10V
L=2.27mH T
ch
=25°C
I
F
=14A V
GS
=0V T
ch
=25°C
I
F
=14A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
°C
°C
5.0
25
250
100
0.46
10
0.35
14
1600
160
7
18
16
35
8
33
12.5
10.5
7
2400
240
10.5
27
24
50
15
50
19
16
16
1.00
0.65
6.0
1.50
Outline Drawings [mm]
P4
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
*3 I
F
=
D
, -di/dt=50A/μs, Vcc=
DSS
, Tch=
*4 VDS<
200304
相關PDF資料
PDF描述
2SK3581-01SJ N-CHANNEL SILICON POWER MOSFET
2SK3586 N CHANNEL SILICON POWER MOSFET
2SK3586-01 N CHANNEL SILICON POWER MOSFET
2SK3588-01L N-CHANNEL SILICON POWER MOSFET
2SK3588-01S N-CHANNEL SILICON POWER MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
2SK3586-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 19 Milliohms;ID +/-73A;TO-220AB;PD 270W;-55 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:270W ;RoHS Compliant: Yes
2SK3586-01 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB
2SK3586-01SC 制造商:Fuji Electric 功能描述:
2SK3587-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK3590-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 31 Milliohms;ID +/-57A;TO-220AB;PD 270W 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB
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