參數(shù)資料
型號(hào): W9864G6IH-6
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 4M X 16 DDR DRAM, 5 ns, PDSO54
封裝: 0.400 INCH, ROHS COMPLIANT, TSOP2-54
文件頁數(shù): 5/44頁
文件大小: 666K
代理商: W9864G6IH-6
W9864G6IH
Publication Release Date: Mar. 22, 2010
- 13 -
Revision A11
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
NOTES
Input, Output Voltage
VIN, VOUT
-0.5 ~ VDD + 0.5 (
≤ 4.6V max.)
V
1
Power Supply Voltage
VDD, VDDQ
-0.5 ~ 4.6
V
1
Operating Temperature (-5/-6/-7/-7S)
TOPR
0 ~ 70
°C
1
Operating Temperature (-6I/-6A)
TOPR
-40 ~ 85
°C
1
Storage Temperature
TSTG
-55 ~ 150
°C
1
Soldering Temperature (10s)
TSOLDER
260
°C
1
Power Dissipation
PD
1
W
1
Short Circuit Output Current
IOUT
50
mA
1
NOTE:
1. Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of
the device.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -5/-6/-7/-7S, TA = -40 to 85°C for -6I/-6A)
PARAMETER
SYM.
MIN.
TYP.
MAX.
UNIT
NOTES
Power Supply Voltage for -5/-6/-6I/-6A
VDD
3.0
3.3
3.6
V
2
Power Supply Voltage for -7/-7S
VDD
2.7
-
3.6
V
2
Power Supply Voltage (I/O Buffer) for -5/-6/-6I/-6A
VDDQ
3.0
3.3
3.6
V
2
Power Supply Voltage (I/O Buffer) for -7/-7S
VDDQ
2.7
-
3.6
V
2
Input High Voltage
VIH
2.0
-
VDD + 0.3
V
2
Input Low Voltage
VIL
-0.3
-
0.8
V
2
Note
: VIH(max) = VDD/ VDDQ+1.5V for pulse width < 5 nS
VIL(min) = VSS/ VSSQ-1.5V for pulse width < 5 nS
9.3 Capacitance
(VDD =3V±0.3V for-5/-6/-6I/-6A, VDD = 2.7V-3.6V for -7/-7S , TA = 25
°C, f = 1 MHz)
PARAMETER
SYM.
MIN.
MAX.
UNIT
Input Capacitance
(A0 to A11, BS0, BS1,
CS , RAS , CAS , WE , CKE)
Ci1
2.5
4
pf
Input Capacitance (CLK)
CCLK
2.5
4
pf
Input/Output Capacitance (DQ0
DQ15)
Co
4
6.5
pf
Input Capacitance DQM
Ci2
3.0
5.5
pf
Note:
These parameters are periodically sampled and not 100% tested
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