- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄225535 > W9864G6IH-6 (WINBOND ELECTRONICS CORP) 4M X 16 DDR DRAM, 5 ns, PDSO54 PDF資料下載
參數(shù)資料
| 型號： | W9864G6IH-6 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 4M X 16 DDR DRAM, 5 ns, PDSO54 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, TSOP2-54 |
| 文件頁數(shù)： | 23/44頁 |
| 文件大小： | 666K |
| 代理商： | W9864G6IH-6 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁
W9864G6IH
Publication Release Date: Mar. 22, 2010
- 3 -
Revision A11
1. GENERAL DESCRIPTION
W9864G6IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
1M words
× 4 banks × 16 bits. W9864G6IH delivers a data bandwidth of up to 200M words per second.
For different application, W9864G6IH is sorted into the following speed grades: -5/-6/-6I/-6A/-7 and -
7S. The -5 parts can run up to 200MHz/CL3. The -6/-6I/-6A parts can run up to 166MHz/CL3 (the -6I
industrial grade, -6A automotive grade which is guaranteed to support -40°C ~ 85°C). The -7/-7S parts
can run up to 143MHz/CL3 and with tRP = 18nS.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle.
The multiple bank nature enables interleaving among internal banks to hide the precharging time.By
having a programmable Mode Register, the system can change burst length, latency cycle, interleave
or sequential burst to maximize its performance. W9864G6IH is ideal for main memory in high
performance applications.
2. FEATURES
3.3V± 0.3V for -5/-6/-6I/-6A speed grades power supply
2. 7V~3.6V for -7/-7S speed grades power supply
1,048,576 words
× 4 banks × 16 bits organization
Self Refresh Current: Standard and Low Power
CAS Latency: 2 & 3
Burst Length: 1, 2, 4, 8 and full page
Sequential and Interleave Burst
Byte data controlled by LDQM, UDQM
Auto-precharge and controlled precharge
Burst read, single write operation
4K refresh cycles/64mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WA-1RX33-A4 | SNAP ACTING/LIMIT SWITCH |
| WA-A325CBM | Peripheral Interface |
| WA-A325CPC | Peripheral Interface |
| WA-A325CPI | Peripheral Interface |
| WA-A325CPM | Peripheral Interface |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9864G6IH-6I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V |
| W9864G6IH-7 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 4BANKS 】 16BITS SDRAM |
| W9864G6IH-7S | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 4BANKS 】 16BITS SDRAM |
| W9864G6JB-6 | 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 64MBIT 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 64MBIT 166MHZ 60VFBGA |
| W9864G6JH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M ? 4 BANKS ? 16 BITS SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。