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參數(shù)資料
| 型號： | VQ1000J |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 51K |
| 代理商： | VQ1000J |
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279
—
Rev. F, 16-Jul-01
www.vishay.com
11-3
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Switching
d
Turn-On Time
t
ON
t
OFF
t
ON
t
OFF
V
= 15 V, R
= 25
0.5 A, V
GEN
= 10 V, R
G
= 25
7
10
Turn-Off Time
I
D
7
10
Turn-On Time
V
= 30 V, R
= 150
0.2 A, V
GEN
= 10 V, R
G
= 25
7
20
ns
Turn-Off Time
I
D
11
20
!"#!
Limits
VQ1000J/P
BS170
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS(th)
V
GS
= 0 V, I
D
= 100 A
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
=
70
60
60
Gate-Threshold Voltage
2.1
0.8
2.5
0.8
3
V
10 V
100
Gate-Body Leakage
I
GSS
T
J
= 125 C
15 V
500
nA
V
DS
= 0 V, V
GS
=
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125 C
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 10 V, V
GS
= 10 V
V
GS
= 5 V, I
D
= 0.2 A
V
GS
= 10 V, I
D
= 0.2 A
V
GS
= 10 V, I
D
= 0.3 A
10
0.5
Zero Gate Voltage Drain Current
I
DSS
500
A
10
On-State Drain Current
b
I
D(on)
1
0.5
A
4
7.5
2.3
5
Drain-Source On-Resistance
b
r
DS(on)
2.3
5.5
T
J
= 125 C
4.2
7.6
V
DS
= 10 V, I
D
= 0.2 A
V
DS
= 10 V, I
D
= 0.5 A
V
DS
=5 V, I
D
= 0.05 A
100
Forward Transconductance
b
g
fs
100
mS
Common Source Output Conductance
b
g
os
0.5
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
22
60
60
Output Capacitance
V
DS
=25 V, V
= 0 V
f = 1 MHz
11
25
pF
Reverse Transfer Capacitance
Switching
d
2
5
Turn-On Time
t
ON
t
OFF
t
ON
t
OFF
V
= 15 V, R
= 23
0.6 A, V
GEN
= 10 V, R
G
= 25
7
10
Turn-Off Time
I
D
7
10
Turn-On Time
V
= 25 V, R
= 125
0.2 A, V
GEN
= 10 V, R
G
= 25
7
10
ns
Turn-Off Time
I
D
7
10
Notes
a.
b.
c.
d.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
80 s duty cycle
This parameter not registered with JEDEC.
Switching time is essentially independent of operating temperature.
VNBF06
1%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VQ1000P | 功能描述:MOSFET QD 60V 0.225A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VQ1000P2 | 制造商:SILICONIX 功能描述:New |
| VQ1000P-2 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 0.225A 14-Pin PDIP T/R |
| VQ1000P-E3 | 功能描述:MOSFET N-CH 60V 0.225A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VQ1001J | 功能描述:MOSFET QD 30V 0.83A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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