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參數(shù)資料
| 型號： | VQ1004J |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) Single and Quad MOSFETs |
| 中文描述： | N通道60 - V（下局副局長）和Quad MOSFET的單 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 56K |
| 代理商： | VQ1004J |
2N6660, VQ1004J/P
Vishay Siliconix
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) Single and Quad MOSFETs
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
2N6660
3 @ V
GS
= 10 V
3.5 @ V
GS
= 10 V
0.8 to 2
1.1
VQ1004J/P
60
0.8 to 2.5
0.46
Low On-Resistance: 1.3
Low Threshold: 1.7 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 8 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
1
2
3
TO-205AD
(TO-39)
Top View
2N6660
D
G
S
Plastic:
Sidebraze: VQ1004P
VQ1004J
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC
NC
G
2
G
3
S
2
S
3
D
2
D
3
N
N
N
N
Device Marking
Top View
VQ1004J
“S”
fllxxyy
“S” = Siliconix Logo
f
= Factory Code
ll
= Lot Traceability
xxyy
= Date Code
VQ1004P
“S”
fllxxyy
Device Marking
Side View
2N6660
“S”
fllxxyy
“S” = Siliconix Logo
f
= Factory Code
ll
= Lot Traceability
xxyy
= Date Code
Single
Total Quad
Parameter
Symbol
2N6660
VQ1004J
VQ1004P
VQ1004J/P
Unit
Drain-Source Voltage
V
DS
V
GS
60
60
60
Gate-Source Voltage
20
30
20
0.46
0.26
2
1.3
0.52
0.96
V
Continuous Drain Current
(T
J
= 150 C)
Pulsed Drain Current
a
T
C
= 25 C
T
C
= 100 C
1.1
0.8
3
6.25
2.5
170
20
0.46
0.26
2
1.3
0.52
0.96
I
D
A
I
DM
T
C
= 25 C
T
C
= 100 C
2
Power Dissipation
P
D
0.8
62.5
W
Thermal Resistance, Junction-to-Ambient
b
Thermal Resistance, Junction-to-Case
Operating Junction and Storage Temperature Range
R
thJA
R
thJC
T
J
, T
stg
C/W
–55 to 150
C
Notes
a.
b.
Pulse width limited by maximum junction temperature.
This parameter not registered with JEDEC.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| VQ1004P | 功能描述:MOSFET QD 60V 0.46A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VQ1004P-2 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 0.46A 14PIN SBDIP - Bulk |
| VQ1004P-E3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 0.46A 14-Pin SBCDIP 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 0.46A 14PDIP - Bulk |
| VQ1006J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 90V V(BR)DSS | 400MA I(D) | DIP |
| VQ1006P | 功能描述:MOSFET 90V QUAD N-CHANNEL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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