參數(shù)資料
型號(hào): VQ1006P
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓90V,夾斷電流0.4A的N溝道增強(qiáng)型MOSFET)
中文描述: N溝道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓90V的,夾斷電流0.4A的N溝道增強(qiáng)型MOSFET的)
文件頁數(shù): 1/4頁
文件大?。?/td> 93K
代理商: VQ1006P
VN0808L/LS, VQ1006P
Vishay Siliconix
Document Number: 70214
S-58620—Rev.C , 21-Jun-99
www.siliconix.com FaxBack 408-970-5600
1
N-Channel Enhancement-Mode MOSFET Transistors
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VN0808L
80
4 @ V
GS
= 10 V
4 @ V
GS
= 10 V
0.8 to 2
0.3
VN0808LS
0.8 to
2
0.33
VQ1006P
90
4 @ V
GS
= 10 V
0.8 to 2.5
0.4
Low On-Resistance: 3.6
Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
TO-92S
Top View
VN0808LS
S
D
G
1
2
3
Sidebraze: VQ1006P
VN0808L
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC
NC
G
2
G
3
S
2
S
3
D
2
D
3
N
N
N
N
Parameter
Symbol
b l
VN0808L
VN0808LS
VQ1006P
U i
Unit
Single
Total Quad
Drain-Source Voltage
V
DS
V
GS
80
80
90
V
Gate-Source Voltage
30
30
20
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
T
A
= 100 C
I
D
0.3
0.33
0.4
A
0.19
0.21
0.23
Pulsed Drain Current
a
I
DM
1.9
1.9
2
Power Dissipation
T
A
= 25 C
T
A
= 100 C
P
D
0.8
0.9
1.3
2
W
0.32
0.4
0.52
0.8
Maximum Junction-to-Ambient
R
thJA
156
139
96
62.5
C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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