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參數(shù)資料
| 型號(hào)： | UPD44324182F5-E37-EQ2-A |
| 廠商： | NEC Corp. |
| 元件分類： | DRAM |
| 英文描述： | 36M-BIT DDRII SRAM 2-WORD BURST OPERATION |
| 中文描述： | 36M條位SRAM的2條DDRII字爆發(fā)運(yùn)作 |
| 文件頁(yè)數(shù)： | 16/40頁(yè) |
| 文件大?。?/td> | 361K |
| 代理商： | UPD44324182F5-E37-EQ2-A |
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16
Data Sheet M16780EJ3V0DS
μ
PD44324082, 44324092, 44324182, 44324362
DC Characteristics (T
A
= 0 to 70°C, V
DD
= 1.8 ± 0.1 V)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Note
x8, x9 x18
x36
Input leakage current
I
LI
–2
–
+2
μ
A
I/O leakage current
I
LO
–2
–
+2
μ
A
Operating supply current
I
DD
V
IN
≤
V
IL
or V
IN
≥
V
IH
,
-E37
690
970 1,090
mA
(Read Write cycle)
I
I/O
= 0 mA
-E40
650
900 1,000
Cycle = MAX.
-E50
550
750
850
Standby supply current
I
SB1
V
IN
≤
V
IL
or V
IN
≥
V
IH
,
-E37
520
mA
(NOP)
I
I/O
= 0 mA
-E40
500
Cycle = MAX.
-E50
400
High level output voltage
V
OH(Low)
|I
OH
|
≤
0.1 mA
V
DD
Q
– 0.2
–
V
DD
Q
V
3, 4
V
OH
Note1
V
DD
Q/2–0.12
–
V
DD
Q/2+0.12
V
3, 4
Low level output voltage
V
OL(Low)
I
OL
≤
0.1 mA
V
SS
–
0.2
V
3, 4
V
OL
Note2
V
DD
Q/2–0.12
–
V
DD
Q/2+0.12
V
3, 4
Notes 1.
Outputs are impedance-controlled. | I
OH
| = (V
DD
Q/2)/(RQ/5) ±15 % for values of 175
≤
RQ
≤
350
.
2.
Outputs are impedance-controlled. I
OL
= (V
DD
Q/2)/(RQ/5) ±15 % for values of 175
≤
RQ
≤
350
.
3.
AC load current is higher than the shown DC values.
4.
HSTL outputs meet JEDEC HSTL Class I and standards.
Capacitance (T
A =
25
°
C, f = 1MHz)
Parameter
Symbol
Test conditions
MIN.
TYP.
MAX.
Unit
Input capacitance (Address, Control)
C
IN
V
IN
= 0 V
4
5
pF
Input / Output capacitance
C
I/O
V
I/O
= 0 V
6
7
pF
(DQ, CQ, CQ#)
Clock Input capacitance
C
clk
V
clk
= 0 V
5
6
pF
Remark
These parameters are periodically sampled and not 100% tested.
Thermal Resistance
Parameter
Symbol
Test conditions
MIN.
TYP.
MAX.
Unit
Thermal resistance
θ
j-a
22.6
°
C/W
(junction – ambient)
Thermal resistance
θ
j-c
2.0
°
C/W
(junction – case)
Remark
These parameters are simulated under the condition of air flow velocity = 1 m/s.
<R>
<R>
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參數(shù)描述 |
|---|---|
| UPD44324185BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin BGA 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324362BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
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| UPD44324365BF5-E40-FQ1-A | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
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