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參數(shù)資料
| 型號： | UPD44324182F5-E37-EQ2-A |
| 廠商： | NEC Corp. |
| 元件分類： | DRAM |
| 英文描述： | 36M-BIT DDRII SRAM 2-WORD BURST OPERATION |
| 中文描述： | 36M條位SRAM的2條DDRII字爆發(fā)運作 |
| 文件頁數(shù)： | 12/40頁 |
| 文件大?。?/td> | 361K |
| 代理商： | UPD44324182F5-E37-EQ2-A |
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12
Data Sheet M16780EJ3V0DS
μ
PD44324082, 44324092, 44324182, 44324362
Burst Sequence
Linear Burst Sequence Table
[
μ
PD44324182,
μ
PD44324362]
A0
A0
External Address
0
1
1st Internal Burst Address
1
0
Truth Table
Operation
LD# R, W#
CLK
DQ
WRITE cycle
L
L
L
→
H
Data in
Load address, input write data on two
Input data
D(A1)
D(A2)
consecutive K and K# rising edge
Input clock
K(t+1)
↑
K#(t+1)
↑
READ cycle
L
H
L
→
H
Data out
Load address, read data on two
Output data
Q(A1)
Q(A2)
consecutive C and C# rising edge
Output clock
C#(t+1)
↑
C(t+2)
↑
NOP (No operation)
H
X
L
→
H
High-Z
Clock stop
X
X
Stopped
Previous state
Remarks 1.
H : High level, L : Low level,
×
: don’t care,
↑
: rising edge.
2.
Data inputs are registered at K and K# rising edges. Data outputs are delivered at C and C# rising edges
except if C and C# are HIGH then Data outputs are delivered at K and K# rising edges.
3.
All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of
K. All control inputs are registered during the rising edge of K.
4.
This device contains circuitry that ensure the outputs to be in high impedance during power-up.
5.
Refer to state diagram and timing diagrams for clarification.
6.
A1 refers to the address input during a WRITE or READ cycle. A2 refers to the next internal burst
address in accordance with the linear burst sequence.
7.
It is recommended that K = K# = C = C# when clock is stopped. This is not essential but permits most
rapid restart by overcoming transmission line charging symmetrically.
相關(guān)PDF資料 |
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| UPD44324182F5-E40-EQ2-A | 36M-BIT DDRII SRAM 2-WORD BURST OPERATION |
| UPD44324182F5-E50-EQ2-A | 36M-BIT DDRII SRAM 2-WORD BURST OPERATION |
| UPD44324362F5-E37-EQ2 | 36M-BIT DDRII SRAM 2-WORD BURST OPERATION |
| UPD44324362F5-E37-EQ2-A | 36M-BIT DDRII SRAM 2-WORD BURST OPERATION |
| UPD44324362F5-E40-EQ2-A | 36M-BIT DDRII SRAM 2-WORD BURST OPERATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD44324185BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin BGA 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324362BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324362BF5-E40-FQ1-A | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324365BF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
| UPD44324365BF5-E40-FQ1-A | 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA |
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