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參數(shù)資料
| 型號(hào)： | UPA652TT |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | UPA652TT |
Data Sheet G16204EJ1V0DS
4
μ
PA652TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
- 1
- 2
- 3
- 4
- 5
0
- 0.5
- 1
- 1.5
- 2
Pulsed
–2.5 V
V
GS
= –4.5 V
–4.0 V
V
DS
- Drain to Source Voltage - V
I
D
- 0.0001
- 0.001
- 0.01
- 0.1
- 1
- 10
0
- 1
- 2
- 3
- 4
V
DS
= –10 V
Pulsed
–25°C
T
A
= 125°C
75°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
- 0.6
- 0.8
- 1
- 1.2
- 1.4
- 1.6
-50
0
50
100
150
V
DS
= –10 V
I
D
= –250
μ
A
T
ch
- Channel Temperature -
°
C
|
f
0.01
0.1
1
10
100
- 0.01
- 0.1
- 1
- 10
V
DS
= –10 V
Pulsed
125°C
T
A
= –25°C
75°C
25°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
200
400
600
800
-50
0
50
100
150
Pulsed
V
GS
= –2.5 V, I
D
= –0.5 A
V
GS
= –4.0 V, I
D
= –1.0 A
V
GS
= –4.5 V, I
D
= –1.0 A
T
ch
- Channel Temperature -
°
C
R
D
0
200
400
600
800
0
- 2
- 4
- 6
- 8
Pulsed
I
D
= –1.0 A
V
GS
- Gate to Source Voltage - V
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