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參數(shù)資料
| 型號(hào)： | UPA653TT |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 70K |
| 代理商： | UPA653TT |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA653TT
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
G16205EJ1V0DS00 (1st edition)
September 2002 NS CP(K)
2002
DESCRIPTION
The
μ
PA653TT is a switching device, which can be driven directly by a
4.0 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
FEATURES
4.0 V drive available
Low on-state resistance
R
DS(on)1
= 165 m
MAX. (V
GS
=
10 V, I
D
=
1.5 A)
R
DS(on)2
= 267 m
MAX. (V
GS
=
4.5 V, I
D
=
1.5 A)
R
DS(on)3
= 304 m
MAX. (V
GS
=
4.0 V, I
D
=
1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA653TT
6pinWSOF (1620)
Marking: WG
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Total Power Dissipation
Note2
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
m
20
m
2.5
m
10
0.2
1.3
150
V
V
A
A
W
W
°C
°C
55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board of 5000 mm
2
x 1.1 mm, t
≤
5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.05 S
2.0±0.2
0
0
2
1
0.65
0.65
0
~
0.05
S
MAX. 0.8
0
+
0
0.2
+0.1
0.05
0.1
S
M
5
6
4
3
1
2
1,2,5,6 : Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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