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參數(shù)資料
| 型號(hào)： | UPA1952 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | UPA1952 |
Data Sheet G15933EJ1V0DS
4
μ
PA1952
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
- 2
- 4
- 6
- 8
0
- 0.2
- 0.4
- 0.6
- 0.8
- 1
- 1.2
Pulsed
2.5 V
V
GS
=
4.5 V
1.8 V
V
DS
- Drain to Source Voltage - V
I
D
- 0.00001
- 0.0001
- 0.001
- 0.01
- 0.1
- 1
- 10
0
- 0.5
- 1
- 1.5
- 2
- 2.5
V
DS
=
10 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
- 0.4
- 0.5
- 0.6
- 0.7
- 0.8
- 0.9
- 1
-50
0
50
100
150
V
DS
=
10 V
I
D
=
1.0 mA
T
ch
- Channel Temperature -
°
C
|
f
0.01
0.1
1
10
- 0.01
- 0.1
- 1
- 10
V
DS
=
10 V
Pulsed
T
A
=
25°C
25°C
75°C
125°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
50
100
150
200
250
300
-50
0
50
100
150
V
GS
=
1.8 V, I
D
=
0.5 A
Pulsed
V
GS
=
2.5 V, I
D
=
1.0 A
V
GS
=
4.5 V, I
D
=
1.0 A
T
ch
- Channel Temperature - °C
R
D
50
100
150
200
250
300
0
- 2
- 4
- 6
- 8
Pulsed
I
D
=
1.0 A
V
GS
- Gate to Source Voltage - V
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|---|---|
| UPA1952TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970TE | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2756GR | SWITCHING N-CHANNEL POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1952TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1952TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1970 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970TE | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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