參數(shù)資料
型號(hào)： UPA2756GR
廠商： NEC Corp.
英文描述： SWITCHING N-CHANNEL POWER MOSFET
中文描述： 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 138K
代理商： UPA2756GR
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2756GR
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. G17407EJ1V0DS00 (1st edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
The
μ
PA2756GR is Dual N-channel MOS Field Effect
Transistor designed for switching applications.
FEATURES
Low on-state resistance
R
DS(on)1
= 105 m
MAX. (V
GS
= 10
V, I
D
= 2.0
A)
R
DS(on)2
= 150 m
MAX. (V
GS
= 4.0
V, I
D
= 2.0 A)
Low C
iss
: C
iss
= 260 pF TYP.
Built-in G-S protection diode against ESD
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2756GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
Total Power Dissipation (1 unit)
Note1
Total Power Dissipation (2 units)
Note1
V
GSS
±20
V
I
D(DC)
±4.0
A
I
D(pulse)
±16
A
P
T1
1.6
W
P
T2
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
Repetitive Avalanche Energy
Note4
T
stg
55 to +150
4.0
°C
I
AS
A
E
AS
1.6
mJ
E
AR
1.6
mJ
Notes 1.
Mounted on ceramic substrate of 2000 mm
2
x 2.2 mm
2.
PW
≤
10
μ
s, Duty Cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
, V
GS
= 20
→
0 V
4.
I
AR
≤
4.0 A, T
ch
≤
150°C
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1
2
7, 8: Drain 1
3
: Source 2
4
: Gate 2
5, 6: Drain 2
: Source 1
EQUIVALENT CIRCUIT
Source 1
Body
Diode
Gate
Protection
Diode
Gate 1
Drain 1
Source 2
Body
Diode
Gate
Protection
Diode
Gate 2
Drain 2
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UPA2756GR-E1 制造商:Renesas Electronics Corporation 功能描述:
UPA2756GR-E1-AT 功能描述:MOSFET N-CH DUAL 60V 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
UPA2756GR-E2-AT 功能描述:MOSFET N-CH DUAL 60V 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
UPA2757GR 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
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